Enhanced Threshold Gate Fan - in Reduction Algorithms 1
نویسندگان
چکیده
The paper describes and improves on a Boolean neural network (NN) fan-in reduction algorithm, with a view to possible VLSI implementation of NNs using threshold gates (TGs). Constructive proofs are given for: (i) at least halving the size; (ii) reducing the depth from O(N) to O(logN). Lastly a fresh algorithm which reduces the size to polynomial is suggested.
منابع مشابه
Enhanced Threshold Gate Fan-in Reduction Algorithms
The paper describes and improves on a Boolean neural network (NN) fan-in reduction algorithm, with a view to possible VLSI implementation of NNs using threshold gates (TGs). Constructive proofs are given for: (i) at least halving the size; (ii) reducing the depth from O(N) to O(logN). Lastly a fresh algorithm which reduces the size to polynomial is suggested.
متن کاملDigital Implementation of Neural Networks Using Threshold Gates 1
In this article we show that VLSI efficient implementations of certain classes of Boolean functions using threshold gates are possible. It is a challenging open problem to find algorithms to synthesize simple neural networks using threshold gates for VLSI implementation. We first investigate depth-size tradeoffs for symmetric functions, detailing two algorithms: one based on the divide-and-conq...
متن کاملA Novel Power Reduction Technique for Dual-threshold Domino Logic in Sub-65nm Technology
A novel technique for dualthreshold is proposed and examined with inputs and clock signals combination in 65nm dualthreshold footerless domino circuit for reduced leakage current. In this technique a p-type and an n-type leakage controlled transistor (LCTs) are introduced between the pull-up and pull-down network and the gate of one is controlled by the source of the other. A high-threshold tra...
متن کاملAlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique
Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance degradation behavior of high-electron-mobility transistors (HEMTs). In this paper, a novel gate dielectric and passivation technique for GaN-on-Si AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) is pr...
متن کاملAn Experimental and Theoretical Study of the Effects of Excess Air Ratio and Waste Gate Opening Pressure Threshold on Nox Emission and Performance in a Turbocharged CNG SI Engine
Turbocharged CNG engines produce high NOx emission due to the fuel type and high combustion temperature. In this research, the effects of lean-burn and waste gate opening pressure threshold on NOx emission are studied theoretically and experimentally at WOT condition as well as 13-mode ECE-R49 test cycle. A code is developed in MATLAB environment for predicting engine NOx and the results are va...
متن کامل